Western Digital Technologies, IncMay 2004 to June 2015Senior Principal Engineer Fremont, CA
Successfully led the magnetic sensor design and implemented the Tunneling MR sensor for many generations of disk drive starting with 250Gbit/in2 density point.
Estimated read sensor requirements for meeting the product performance, followed by running designed experiments (DOE) to achieve/optimize and improve performance, yield and reliability of the read sensor.
Worked closely with the process team to come up with a manufacturable process which delivered the required performance/reliability. Worked closely with the Reliability and performance testing teams to evaluate and improve component level reader reliability; engaged in reliability failure analysis.
Collaborated with NPI and manufacturing teams in setting up backend test setups and specs.
Developed new tests for characterizing both performance and reliability KPOV.
Automated routine data analysis using JMP, Python scripts. This improved the productivity of the team by 50%.
R&D lead for implementation of factory wide data systems.
Mentored new team members on design methodology and other internal processes.
Intel, Portland Technology DevelopmentAugust 2003 to May 2004Senior Process Engineer Hillsboro, OR
Responsible for the development of Strained Si-Ge CVD thin film process for 65nm CMOS technology.
Trained in all aspects of semiconductor wafer processing and statistical methods.
Stanford UniversitySeptember 1997 to June 2003Graduate Research Assistant Stanford, CA
Developed a process for depositing epitaxial cobalt (1010) films by UHV sputtering on single crystal silicon and magnesium oxide substrates.
Fabricated nanoscale magnetic island arrays by e-beam lithography and characterized them by magnetic force microscopy (MFM).
Measured stress in blanket film and magnetic islands using synchrotron radiation source.
Measured switching field distribution of the magnetic island array using in-situ field MFM and used micro-magnetic simulation to understand the results.
A conventional magneto-resistive head was used to write and read data on a close packed array of the islands (200Gbits/in2) and estimated the recording characteristics.
Compared the recording characteristics of patterned and conventional recording media.
This was done in collaboration with IBM Almaden research center
IBM Almaden Research CenterMay 2001 to September 2001Summer Intern San Jose, CA
Studied the effect of ion beam irradiation on the magnetic properties of perpendicular magnetic media.
The ion beam irradiated films were characterized by MOKE, VSM and MFM.
Fabricated sub-100nm island mask on perpendicular media by electron beam lithography, followed by ion beam irradiation to destroy the magnetism in-between the islands.
The effect of various inert gas ions was studied.
Publications, Patents and Presentations
Properties of Lithographically formed Cobalt and Cobalt Alloy Single Crystal Patterned Media, IEEE Trans. Mag., v.36 n5, pp.2987-89, 2001
Patterned perpendicular and longitudinal media: A magnetic recording study, IEEE Trans Mag., v.39 n5, pp.2323-25, 2003
MFM studies on Patterned Longitudinal Media, National Storage Industry Consortium- Annual Meeting, June 1999, Monterey, CA.
Properties of Cobalt and Cobalt Alloy Single Crystal Patterned Media, INTERMAG conference, April 2000, Toronto, Canada.
Switching studies on Patterned Longitudinal media, March 2002, IBM Almaden Research Center, San Jose, CA.
Current Employer: Western Digital Technologies Inc., Fremont, CA.