LiveCareer-Resume

Research Associate resume example with 6+ years of experience

Jessica
Claire
resumesample@example.com
(555) 432-1000,
Montgomery Street, San Francisco, CA 94105
:
Professional Profile
Enthusiastic individual with  over  6  years of  experience in epitaxial growth of III-V semiconductor materials (nanowires,quantum dots, 2D) and material characterization. Solid understanding of semiconductor growth and device physics,vaccum technology and and statistical data analysis.Interested in R&D of technology driven new materials for energy harvesting and device applications
Research on new material
Core Strengths
  • Molecular and Chemical beam Epitaxy of RIBER and SVTA
  • Oxide sputtering
  • Thermal evaporation
  • TCAD Silvaco
  • Nanotechnology
  • Photoluminescence (PL)
  •  X-ray Diffraction (XRD)
  • Atomic Force microscopy (AFM)
  • Hall measurements
  • Scanning Electron Microscope (SEM)
  • Nanowires,Quantum dots,2D
  • Theory and Simulation
  • Cleanroom experience
Education
Scuola Normale Superiore Pisa, Tuscany Expected in 2016 Ph.D. : Condensed Matter Physics - GPA :
Thesis: Catalyst-assisted and catalyst-free growth of III-V semiconductor nanowires Supervisor: Prof. Lucia Sorba and Prof. Fabio Beltram
Coursework includes Physics of Semiconductors,Physics of nano structures, Physics of surfaces and interfaces
Jadavpur University Kolkata, West Bengal Expected in 2009 Master of Science : Electronic Science - GPA : GPA: 8.2/10 Recipient of University Gold medal from Jadavpur university Recipient of Medal from Chattagram Parishad,JadavpurRecipient of Dr.S.C.Mukherjee Memorial Gold centered Silver medal from Jadavpur University
North Bengal University Darjeeling, West Bengal Expected in 2007 Bachelor of Science : Physics - GPA : Recipient of token of merit from St.Joseph's college
Experience
Davenport - Research Associate
Kilmarnock, VA, Italy 2013 - 09/2016
  • Developed Au-free growth (catalyst-free and self catalyzed) of InAs ,InAs/GaSb,InAs/InP heterostructure nanowires-on-Silicon with novel Silicon substrate engineering by chemical beam epitaxy (RIBER).
  • Developed the growth process of Au catalyzed InAs & GaAs ,InAs/GaAs,GaAs/InAs and Quantum Dot nanowire heterostructures 
  • Designed,modeled and fabricated semiconductor nanowires and heterostructures for quantum transport applications
  • Major involvement in international collaborative project CNR-RFBR (Russia) titled "Semiconductor Nanowires: from fundamental research to innovative devices" with Prof.V.G.Dubrovskii, and his Laboratory of physics of nanostructures at St.Petersburg Academic University RAS.
  • Presented research results in conferences EuroMBE,ICMBE and Nanowires
The University Of Oklahoma - Research Collaborator
Norman, OK, U.S.A 04/2012 - 06/2012
  • Trained for MBE growth of GaN on Sapphire and silicon substrate and InGaAs on GaAs substrates and inspection of cluster tool MBE.
  • Trained for MBE maintenance and operation
Great Lakes Credit Union - Research Fellow
Waukegan, IL, India 01/2011 - 11/2012
  • Awarded Ministry of Human Resource and Development Research Fellowship
  • Project coordinator and team management for the project "Development of MBE cluster tool based epitaxial nano-semiconductor infrastructure and process integration facility for high performance RF/microwave compound semiconductor heterostructures nano-devices on silicon" sponsored by Department of Information technology, Government of India.
  • Molecular Beam epitaxy (RIBER and SVTA) growth of III-V (Arsenide and Nitrides) high electron mobility structures (HEMTs)
  • Material characterization of HEMT structures (Hall measurements, Thin film XRD and photoluminescence)
  • Lead researcher for management of Simulation infrastructure for device simulation using TCAD Silvaco and co-ordination with TCAD industries
  • Associated  for project management and development for India -Taiwan programme of cooperation in Science & Technology: High Performances Solar Devices Using GaN/InGaN Multiple Junction and Silicon Integrated Photonics Electronics FAB (SIPE) in Advanced Semiconductor Park (ASP) of Science & Technology Entrepreneurs' Park (STEP).
Cognizant Technology Solutions - Programmer Analyst
City, , India 01/2010 - 01/2011
  • Java Technology Consultant and Development of Software applications using Java and Oracle for leading Fortune 500 companies in the Health Care Vertical and Retail Chain Skills 
  • Conducted design and code reviews to share knowledge with development team.
  • Worked on large enterprise and business critical applications. 
Affiliations
IEEE student member,
International Association of Engineers (IAENG) Life member,
International Microelectronics and packaging Society (IMAPS),
Reviewer Current Applied Physics,Elsevier

Publications
  • V.G. Dubrovskii ,N. V. Sibirev,Y.Berdnikov, U. P. Claire, D. Ercolani,V.Zannier and L. Sorba, Length distributions of Au-catalyzed and In-catalyzed InAs nanowires, submitted to Nanotechnology,
  • U. P. Claire, D. Ercolani, V. Zannier, J.David, M. Gemmi, F. Beltram and L. Sorba, Nucleation and growth mechanism of self-catalyzed InAs nanowires on silicon, 27 255601 Nanotechnology (2016)
  • U. P. Claire, D. Ercolani, V. Zannier, F. Beltram and L. Sorba, Controlling the diameter distribution and density of InAs nanowires grown by Au-assisted methods, Semiconductor Science and Technology,30, 115012 (2015)
  • U. P. Claire, D. Ercolani, N. V. Sibirev, M. Gemmi, V.G. Dubrovskii F. Beltram and L. Sorba, Catalyst-free growth of InAs nanowires on Si (111) by CBE, Nanotechnology,26, 415604 (2015)
  • U. P. Claire, D. Ercolani, V. Zannier, F. Beltram and L. Sorba, Silicon substrate preparation for the Au-free epitaxy of InAs nanowires, in preparation
  • V. Zannier, D. Ercolani, U. P. Claire, J.David, M. Gemmi, and L.Sorba Controlling the growth of GaAs/InAs heterostructured nanowires by catalyst composition and dynamics, under submission
  • U.P.Gomes, K. Takhar, K. Ranjan, S. Rathi ,D. Biswas ,A comparative TCAD assessment of III-V channel materials for future high speed and low power logic applications, IOP Conference Series: Materials Science and Engineering 73, 012002 (2015)
  • K.Takhar,U.P.Claire, K. Ranjan, S.Rathi ,D.Biswas ,Temperature dependent DC characterization of InAlN/(AlN)/GaN HEMT for Improved Reliability, IOP Conference Series: Materials Science and Engineering 73, 012001 (2015)
  • P. Mukhopadhyay, A. Bag, U.P.Claire, U. Banerjee, S. Ghosh, S. Kabi, E. Y. I. Chang, A. Dabiran, P. Chow, D. Biswas,Comparative DC Characteristic Analysis of AlGaN/GaN HEMTs Grown on Si(111) and Sapphire Substrates by MBE, Journal of Electronic Materials, 43, 1263-1270 (2014)
  • U.P. Claire ,Y.Chen,S.Kabi,P.Chow,D.Biswas, Quantum well engineering of InAlAs/InGaAs HEMTs for low impact ionization applications, Current Applied Physics, 13, 487-492(2013)
  • U.P.Claire, K. Takhar, K.Ranjan, S.Rathi and D. Biswas, Simulation study of low dimensional effects in pitch-scaled (90 nm technology node) HEMT for VLSI applications, J. Nanoelectron. Optoelectron. 8, 170-176 (2013)
  • U.P.Claire, K.Ranjan, S. Chowdhury, P. Das, S. Rathi and D. Biswas ,Quantitative assessment of the effects of strain on future III-V digital applications, Journal of Microelectronics and Electronic Packaging,9,37-42 (2012)
  • U.P. Claire, Y.K. Yadav, S. Chowdhury, K. Ranjan, S. Rathi, D. Biswas ,Prospects of III-Vs for Logic Applications, Journal of Nano-electronics and Physics, 4, 02009 (2012)
  • U.P.Claire, K.Takhar, K. Ranjan, D.Biswas ,A Strategic Review on Growth of InP on Silicon Substrate for Applications in High Frequency RF Devices, International Journal of Electrical and Electronics Engineering 1, 2231 - 5284 (2011) 
Selected Conferences
  • Nucleation and growth mechanism of self-catalysed InAs nanowires,International Conference of MBE,France (2016)
  • Nucleation mechanism and growth kinetics of InAs nanowires grown by Chemical Beam Epitaxy, 18th European Molecular Beam Epitaxy workshop , Canazei, Italy (2015) (oral presentation )  23rd International Symposium Nanostructures: Physics and Technology,St. Pertersburg, Russia  (2015) (poster) 9th Nanowire Growth Workshop , Barcelona (2015 (poster)  
  • Growth of GaAs/InAs and InAs/GaAs axial heterostructured nanowires by Chemical Beam Epitaxy, 9th Nanowire Growth Workshop , Barcelona (2015) (oral )  
  • Diameter distribution of InAs nanowires grown by Au-assisted methods, 9th Nanowire Growth Workshop , Barcelona (2015) , 
  • Heteroepitaxial Growth of InAs Nanowires on Si (111) by Chemical Beam Epitaxy, 8th Nanowire Growth Workshop, Eindhoven, Netherlands (2014) (poster)  
  • The influence of V/III flow ratio on the self-induced InAs nanowires growth,5th European conference on crystal growth,Bologna,Italy (2015) (poster)
  • Growth and Characterization of Band Gap Engineered InGaAs/InAlAs/ GaAs High Electron-Mobility Quantum Well Structure Towards Low Leakage VLSI Applications, CS Mantech, New Orleans,2013 (poster)
  • Logic Performance and Strain Analysis of Al0.50In0.50As/ In0.53Ga0.47As/ Al0.50In0.50As Metamorphic HEMT, International Conference on Computational Electronics and Nanotechnology,Jaipur,India, 2012 (Oral)

Technical Skills
  • Brainbench cognizant JAVA ,J2EE and Business writing certified
  • Brainware certified in C and C++
  • Oracle database management
Fellowships and Awards
UGC National Eligibility Test ( NET)  in Electronic Science  
UGC Junior Research Fellowship Award
Inspire Research Fellowship Award
MHRD Research Fellowship Award

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Resume Overview

School Attended

  • Scuola Normale Superiore
  • Jadavpur University
  • North Bengal University

Job Titles Held:

  • Research Associate
  • Research Collaborator
  • Research Fellow
  • Programmer Analyst

Degrees

  • Ph.D.
  • Master of Science
  • Bachelor of Science

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