Research Associate resume example with 6+ years of experience
Jessica
Claire
resumesample@example.com
(555) 432-1000,
Montgomery Street, San Francisco, CA94105
:
Professional Profile
Enthusiastic individual withĀ overĀ 6Ā years ofĀ
experience in epitaxial growth of III-V semiconductor materials (nanowires,quantum dots, 2D) and material characterization.Ā Solid understanding of semiconductor growth and device physics,vaccum technology and and statistical data analysis.Interested in R&D of technology driven new materials for energy harvesting and device applications
Research on new material
Core Strengths
Molecular and Chemical beam Epitaxy of RIBER and SVTA
Oxide sputtering
Thermal evaporation
TCAD Silvaco
Nanotechnology
Photoluminescence (PL)
Ā X-ray Diffraction (XRD)
Atomic Force microscopy (AFM)
Hall measurements
Scanning Electron Microscope (SEM)
Nanowires,Quantum dots,2D
Theory and Simulation
Cleanroom experience
Education
Scuola Normale SuperiorePisa, TuscanyExpected in 2016 ā āPh.D.:Condensed Matter Physics - GPA:
Thesis: Catalyst-assisted and catalyst-free growth of III-V semiconductor nanowires Supervisor: Prof. Lucia Sorba and Prof. Fabio Beltram
Coursework includes Physics of Semiconductors,Physics of nano structures, Physics of surfaces and interfaces
Jadavpur UniversityKolkata, West BengalExpected in 2009 ā āMaster of Science:Electronic Science - GPA:GPA: 8.2/10Recipient of University Gold medal from Jadavpur university Recipient of MedalĀ from Chattagram Parishad,JadavpurRecipient of Dr.S.C.Mukherjee Memorial Gold centered Silver medalĀ from Jadavpur University
North Bengal UniversityDarjeeling, West BengalExpected in 2007 ā āBachelor of Science:Physics - GPA:Recipient of token of merit from St.Joseph's college
Experience
Davenport - Research Associate Kilmarnock, VA, Italy2013 - 09/2016
Developed Au-free growth (catalyst-free and self catalyzed) of InAs ,InAs/GaSb,InAs/InP heterostructure nanowires-on-Silicon with novel Silicon substrate engineering by chemical beam epitaxy (RIBER).
Developed the growth process of Au catalyzed InAs & GaAs ,InAs/GaAs,GaAs/InAs and Quantum Dot nanowire heterostructuresĀ
Designed,modeled and fabricated semiconductor nanowires and heterostructures for quantum transport applications
Major involvement in international collaborative project CNR-RFBR (Russia) titled "Semiconductor Nanowires: from fundamental research to innovative devices" with Prof.V.G.Dubrovskii, and his Laboratory of physics of nanostructures at St.Petersburg Academic University RAS.
Presented research results in conferences EuroMBE,ICMBE and Nanowires
The University Of Oklahoma - Research Collaborator Norman, OK, U.S.A04/2012 - 06/2012
Trained for MBE growth of GaN on Sapphire and silicon substrate and InGaAs on GaAs substrates and inspection of cluster tool MBE.
Trained for MBE maintenance and operation
Great Lakes Credit Union - Research Fellow Waukegan, IL, India01/2011 - 11/2012
Awarded Ministry of Human Resource and Development Research Fellowship
Project coordinator and team management for the project "Development of MBE cluster tool based epitaxial nano-semiconductor infrastructure and process integration facility for high performance RF/microwave compound semiconductor heterostructures nano-devices on silicon" sponsored by Department of Information technology, Government of India.
Molecular Beam epitaxy (RIBER and SVTA) growth of III-V (Arsenide and Nitrides) high electron mobility structures (HEMTs)
Material characterization of HEMT structures (Hall measurements, Thin film XRD and photoluminescence)
Lead researcher for management of Simulation infrastructure for device simulation using TCAD Silvaco and co-ordination with TCAD industries
Associated Ā for project management and development for India -Taiwan programme of cooperation in Science & Technology: High Performances Solar Devices Using GaN/InGaN Multiple Junction and Silicon Integrated Photonics Electronics FAB (SIPE) in Advanced Semiconductor Park (ASP) of Science & Technology Entrepreneurs' Park (STEP).
Java Technology Consultant and Development of Software applications using Java and Oracle for leading Fortune 500 companies in the Health Care Vertical and Retail Chain SkillsĀ
Conducted design and code reviews to share knowledge with development team.
Worked on large enterprise and business critical applications.Ā
Affiliations
IEEE student member,
International Association of Engineers (IAENG) Life member,
International Microelectronics and packaging Society (IMAPS),
Reviewer Current Applied Physics,Elsevier
Publications
V.G. Dubrovskii ,N. V. Sibirev,Y.Berdnikov, U. P. Claire, D. Ercolani,V.Zannier and L. Sorba, Length distributions of Au-catalyzed and In-catalyzed InAs nanowires, submitted to Nanotechnology,
U. P. Claire, D. Ercolani, V. Zannier, J.David, M. Gemmi, F. Beltram and L. Sorba, Nucleation and growth mechanism of self-catalyzed InAs nanowires on silicon, 27 255601 Nanotechnology (2016)
U. P. Claire, D. Ercolani, V. Zannier, F. Beltram and L. Sorba, Controlling the diameter distribution and density of InAs nanowires grown by Au-assisted methods, Semiconductor Science and Technology,30, 115012 (2015)
U. P. Claire, D. Ercolani, N. V. Sibirev, M. Gemmi, V.G. Dubrovskii F. Beltram and L. Sorba, Catalyst-free growth of InAs nanowires on Si (111) by CBE, Nanotechnology,26, 415604 (2015)
U. P. Claire, D. Ercolani, V. Zannier, F. Beltram and L. Sorba, Silicon substrate preparation for the Au-free epitaxy of InAs nanowires, in preparation
V. Zannier, D. Ercolani, U. P. Claire, J.David, M. Gemmi, and L.Sorba Controlling the growth of GaAs/InAs heterostructured nanowires by catalyst composition and dynamics, under submission
U.P.Gomes, K. Takhar, K. Ranjan, S. Rathi ,D. Biswas ,A comparative TCAD assessment of III-V channel materials for future high speed and low power logic applications, IOP Conference Series: Materials Science and Engineering 73, 012002 (2015)
K.Takhar,U.P.Claire, K. Ranjan, S.Rathi ,D.Biswas ,Temperature dependent DC characterization of InAlN/(AlN)/GaN HEMT for Improved Reliability, IOP Conference Series: Materials Science and Engineering 73, 012001 (2015)
P. Mukhopadhyay, A. Bag, U.P.Claire, U. Banerjee, S. Ghosh, S. Kabi, E. Y. I. Chang, A. Dabiran, P. Chow, D. Biswas,Comparative DC Characteristic Analysis of AlGaN/GaN HEMTs Grown on Si(111) and Sapphire Substrates by MBE, Journal of Electronic Materials, 43, 1263-1270 (2014)
U.P. Claire ,Y.Chen,S.Kabi,P.Chow,D.Biswas, Quantum well engineering of InAlAs/InGaAs HEMTs for low impact ionization applications, Current Applied Physics, 13, 487-492(2013)
U.P.Claire, K. Takhar, K.Ranjan, S.Rathi and D. Biswas, Simulation study of low dimensional effects in pitch-scaled (90 nm technology node) HEMT for VLSI applications, J. Nanoelectron. Optoelectron. 8, 170-176 (2013)
U.P.Claire, K.Ranjan, S. Chowdhury, P. Das, S. Rathi and D. Biswas ,Quantitative assessment of the effects of strain on future III-V digital applications, Journal of Microelectronics and Electronic Packaging,9,37-42 (2012)
U.P. Claire, Y.K. Yadav, S. Chowdhury, K. Ranjan, S. Rathi, D. Biswas ,Prospects of III-Vs for Logic Applications, Journal of Nano-electronics and Physics, 4, 02009 (2012)
U.P.Claire, K.Takhar, K. Ranjan, D.Biswas ,A Strategic Review on Growth of InP on Silicon Substrate for Applications in High Frequency RF Devices, International Journal of Electrical and Electronics Engineering 1, 2231 - 5284 (2011)Ā
Selected Conferences
Nucleation and growth mechanism of self-catalysed InAs nanowires,International Conference of MBE,France (2016)
Nucleation mechanism and growth kinetics of InAs nanowires grown
by Chemical Beam Epitaxy, 18th European Molecular Beam Epitaxy
workshop , Canazei, Italy (2015) (oral presentation
) Ā 23rd International Symposium Nanostructures: Physics and
Technology,St. Pertersburg, Russia Ā (2015) (poster) 9th Nanowire Growth Workshop , Barcelona (2015Ā (poster) Ā
Growth of GaAs/InAs and InAs/GaAs
axial heterostructured nanowires by Chemical Beam Epitaxy, 9th Nanowire Growth
Workshop , Barcelona (2015) (oral ) Ā
Diameter
distribution of InAs nanowires grown by Au-assisted methods, 9th Nanowire Growth Workshop , Barcelona (2015)Ā ,Ā
Heteroepitaxial Growth of InAs Nanowires on Si (111) by Chemical Beam
Epitaxy, 8th Nanowire Growth Workshop, Eindhoven, Netherlands (2014)
(poster) Ā
The influence of V/III flow ratio on the self-induced
InAs nanowires growth,5th European conference on crystal
growth,Bologna,Italy (2015) (poster)
Growth and Characterization
of Band Gap Engineered InGaAs/InAlAs/ GaAs High Electron-Mobility Quantum Well
Structure Towards Low Leakage VLSI Applications, CS Mantech, New Orleans,2013 (poster)
Logic Performance and Strain Analysis of Al0.50In0.50As/
In0.53Ga0.47As/ Al0.50In0.50As
Metamorphic HEMT, International Conference on Computational Electronics and
Nanotechnology,Jaipur,India, 2012 (Oral)
Technical Skills
Brainbench cognizant JAVA ,J2EE and Business writing certified
Brainware
certified in C and C++
Oracle database management
Fellowships and Awards
UGC National Eligibility Test ( NET) Ā in Electronic Science Ā
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