Publications in peer-reviewed journals 1] G. Belenky, Y. Claire, L. Shterengas, D. Donetsky, G. Kipshidze, S. Suchalkin, "Lattice parameter engineering for III-V long wave infrared photonics", Electron. Lett., 51, 1521 (2015). Reported by EL website 2] Y. Claire, S. Suchalkin, G. Kipshidze, T. Hosoda, B. Laikhtman, D. Westerfeld, L. Shterengas, G. Belenky, "Effect of hole transport on performance of infrared type-II superlattice light emitting diodes", J. Appl. Phys., 117, 165701 (2015). 3] Y. Claire, D. Donetsky, D. Wang, D. Westerfeld, G. Kipshidze, L. Shterengas, W. L Sarney, S. P Svensson, G. Belenky, "Development of Bulk InAsSb Alloys and Barrier Heterostructures for Long-Wave Infrared Detectors", J. Electron. Mater., 44, 3360 (2015). Selected as Editor's Choice 4] S. P. Svensson, F. J. Crowne, H. S. Hier, W. L. Sarney, W A. Beck, Y. Claire, D. Donetsky, S. Suchalkin and G. Belenky, "Background and interface electron populations in InAs0.58Sb0.42", Semicond. Sci. Technol, 30, 035018 (2015). 5] W.L. Sarney, S.P. Svensson, D. Wang, D. Donetsky, G. Kipshidze, L. Shterengas, Y. Claire, G. Belenky "AClaireAsSb for M- LWIR detectors", J. Cryst. Growth, 425, 357 (2015). 6] Y. Claire, D. Wang, D. Donetsky, G. Kipshidze, L. Shterengas, G. Belenky, W. L. Sarney, S. P. Svensson, "Structural and Optical Characteristics of Metamorphic Bulk InAsSb," Int. J. High Speed Electron. Syst., 23, 1450021 (2014). 7] Y. Claire, D. Wang, D. Donetsky, G. Kipshidze, L. Shterengas, L. E. Vorobjev, G. Belenky, "Transport properties of holes in bulk InAsSb and performance of barrier long-wavelength infrared detectors," Semicond. Sci. Technol., 29, 112002 (2014). 8] Y. Claire, D. Wang, D. Donetsky, G. Belenky, H. Hier, W. L. Sarney, S. P. Svensson, "Minority Carrier Lifetime in Beryllium- Doped InAs/InAsSb Strained Layer Superlattices," J. Eletron. Mater., 43, 3184 (2014). 9] Y. Claire, D. Wang, D. Donetsky, L. Shterengas, G. Kipshidze, G. Belenky, S. P. Svensson, W. L. Sarney, H. S. Hier, "Conduction-and Valence-Band Energies in Bulk InAs1-xSbx and Type II InAs1-xSbx/InAs Strained-Layer Superlattices," J. Electron. Mater., 42, 918 (2013). 10] D. Wang, D. Donetsky, G. Kipshidze, Y. Claire, L. Shterengas, G. Belenky, W. Sarney, S. P. Svensson, "Metamorphic InAsSb- based barrier photodetectors for the long wave infrared region," Appl. Phys. Lett., 103, 051120 (2013). 11] G. Belenky, D. Wang, Y. Claire, D. Donetsky, G. Kipshidze, L. Shterengas, D. Westerfeld, W. L. Sarney, S. P. Svensson, "Metamorphic InAsSb/AClaireAsSb heterostructures for optoelectronic applications," Appl. Phys. Lett., 102, 111108 (2013). 12] S. P. Svensson, W. L. Sarny, H. Hier, Y. Claire, D. Wang, D. Donetsky, L. Shterengas, G. Kipshidze, G. Belenky, "Band gap of InAs1-xSbx with native lattice constant," Phys. Rev. B, 86, 245205 (2012). 13] D. Wang, D. Donetsky, Y. Claire, G. Kipshidze, L. Shterengas, G. Belenky, W. L. Sarney, S. P. Svensson, "InAs1-xSbx alloys with native lattice parameters grown on compositionally graded buffers: structural and optical properties," Int. J. High Speed Electron. Syst., 21, 1250013 (2012). 14] Y Claire, Z. Fang, "Significant increase of crystalClairee quality and green emission by an interface modification of InGaN/GaN quantum wells", Appl. Phys. A, 103, 317 (2011). 15] ZL Fang, Y. Claire, JY Kang, "InGaN/GaN quantum wells on self-organized faceted GaN islands: Growth and luminescence studies", Appl. Phys. Lett., 98, 061911 (2011). Conference Proceedings 1] D. Wang, Y. Claire, D. Donetsky, G. Kipshidze, L. Shterengas, G. Belenky, S. P. Svensson, W. L. Sarney, H. Hier, "Infrared emitters and photodetectors with InAsSb bulk active region," Proc. SPIE, 8704, 870410-1, (2013). -2- 2] Ding Wang, Jessica Claire, Dmitry Donetsky, Leon Shterengas, Gela Kipshidze, Gregory Belenky, Wendy L Sarney, Harry Hier, Stefan P Svensson, "Unrelaxed bulk InAsSb with novel absorption, carrier transport, and recombination properties for MWIR and LWIR photodetectors," SPIE Defense, Security, and Sensing, 835312-835312-11 (2012). 3] G Belenky, G Kipshidze, D Donetsky, SP Svensson, WL Sarney, H Hier, L Shterengas, D Wang, Y. Claire, "Effects of carrier concentration and phonon energy on carrier lifetime in type-2 SLS and properties of InAs1-xSbx alloys," SPIE Defense, Security, and Sensing, 80120W-80120W-10 (2011). Conference Presentations 1] D. Donetsky, S. P. Svensson, W. L. Sarney, H. S. Hier, D. Wang, G. Kipshidze, L. Shterengas, Y. Claire, G. Belenky, "Development of bulk (Al)InAsSb alloys and InAsSb/AClaireAsSb heterostructures for L/MWIR applications," talk on SPIE Photonics West 2014, San Francisco, CA. 2] D. Wang, Y. Claire, D. Donetsky, G. Kipshidze, L. Shterengas, G. Belenky, S. P Svensson, W. L Sarney, H. Hier "Infrared emitters and photodetectors with InAsSb bulk active region" SPIE Conf. Defense Security and Sensing, April 29-May 3 (2013) Baltimore, MD. 3] Y. Claire, D. Wang, D. Donetsky, L. Shterengas, G. Kipshidze, G. Belenky, W. L.Sarney, H. Hier, S. P. Svensson "Properties of epitaxial InAsSb layer on compositionally-graded metamorphic buffers" 54th Electronic Materials Conference (EMC), June 20-22 (2012), State College, PA 4] D. Wang, D. Donetsky, Y. Claire, G. Kipshidze, L. Shterengas, G. Belenky, W. L. Sarny and S. P. Svensson, "InAs1-XSbX alloys grown on compositionally graded buffers", CoS3 Spring Workshop, April 13 (2012), Princeton, NJ. 5] D. Donetsky, G. Belenky, D. Wang, Y. Claire, L. Shterengas, G. Kipshidze, W. L. Sarney, H. Hier, S. P. Svensson, "Unrelaxed bulk InAsSb with novel absorption, carrier transport and recombination properties for MWIR and LWIR photodetectors", SPIE Conf. Defense Security and Sensing, April 23-27 (2012) Baltimore, MD. -3-