Graduate Research Assistant resume example with 11+ years of experience
JessicaClaire
Montgomery Street, San Francisco, CA94105609 Johnson Ave., 49204, Tulsa, OK
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India:
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Professional Summary
Highly motivated Sales Associate with extensive customer service and sales experience. Outgoing sales professional with track record of driving increased sales, improving buying experience and elevating company profile with target market.
Work History
, - ECE Department – ,
, - Physics Department – ,
Core Qualifications
Device design and simulation Matlab, Mathematica, COMSOL Multiphysics, PADRE, BeamPROP, AutoCAD, LABVIEW. Device fabrication Clean room activities: including photolithography (UV beam), deposition technology (SiN dielectric deposition, and metal contacts deposition), wet/dry etching techniques, anneaClaireg, dicing, mounting and bonding devices. Devices characterization Optical: bench-top optics, alignment, photo- and electro-luminescence, transmittance and reflectance measurement. LEDs power calibration, carrier lifetime measurement, photo-detector characterization (photoconductivity, quantum efficiency, noise characteristics). Electrical: Temperature dependent I-V characteristics, C-V measurement, Hall measurement. Material characterization High resolution X-ray diffraction, Atomic Force Microscopy, Scanning Electron Microscopy, FTIR. -1-
Experience
Graduate Research Assistant, 09/2010 - Present Purdue University – , , USA
Development of the narrowest band-gap material system (InAsSb) among group III-V alloys grown on metamorphic buffer.
Demonstrated the narrowest optical energy bandgap ever reported (0.1 eV) among group III-V ternary materials.
Updated bandgap bowing parameters of this material system from previous work 0.67 eV to 0.87 eV, useful for future design.
Design and build up a new method to measure carrier lifetime, diffusion length and mobility for the longwave infrared materials.
Illustrated the potential to replace HgCdTe as longwave infrared photodector active layer materials.
Develop and characterize ultrathin InAsSbx/InAsSby periodic ordering structures for very long wavelength (beyond 14 m) optoelectronic devices.
Demonstrated the optical energy bandgap in short period superlattice as narrow as 67 meV.
Investigated the special optical absorption properties of the novel superlattice materials.
Design, and fabricate long-wave infrared optoelectronics devices (LEDs, Photo-detectors) based on bulk InAsSb.
Demonstrated the background limited performance in InAsSb based photodetector with cutoff 10 µ m.
Demonstrated the fast response longwave infrared detector with cutoff 50MHz, comparable to commercial available HgCdTe based photodetector.
Design and fabricate the 3-4 m cascaded LEDs.
Demonstrated a record of 2 mW quasi-CW output power with peak wavelength 3.3 µ in 10-cascaded LED m sing device.
Undergraduate Research Assistant, 06/2009 - 06/2010 University Of South Carolina – , , China
Investigate effect of interfacial modification between InGaN and GaN, in GaN-based LED.
Investigate property of island growth of InGaN.
Education
Ph.D: Electrical Engineering, Expected in May 2016 - Stony Brook University - , GPA: Electrical Engineering
B.S: , Expected in June 2010 - Xiamen University - , GPA:
Publications
Publications in peer-reviewed journals 1] G. Belenky, Y. Claire, L. Shterengas, D. Donetsky, G. Kipshidze, S. Suchalkin, "Lattice parameter engineering for III-V long wave infrared photonics", Electron. Lett., 51, 1521 (2015). Reported by EL website 2] Y. Claire, S. Suchalkin, G. Kipshidze, T. Hosoda, B. Laikhtman, D. Westerfeld, L. Shterengas, G. Belenky, "Effect of hole transport on performance of infrared type-II superlattice light emitting diodes", J. Appl. Phys., 117, 165701 (2015). 3] Y. Claire, D. Donetsky, D. Wang, D. Westerfeld, G. Kipshidze, L. Shterengas, W. L Sarney, S. P Svensson, G. Belenky, "Development of Bulk InAsSb Alloys and Barrier Heterostructures for Long-Wave Infrared Detectors", J. Electron. Mater., 44, 3360 (2015). Selected as Editor's Choice 4] S. P. Svensson, F. J. Crowne, H. S. Hier, W. L. Sarney, W A. Beck, Y. Claire, D. Donetsky, S. Suchalkin and G. Belenky, "Background and interface electron populations in InAs0.58Sb0.42", Semicond. Sci. Technol, 30, 035018 (2015). 5] W.L. Sarney, S.P. Svensson, D. Wang, D. Donetsky, G. Kipshidze, L. Shterengas, Y. Claire, G. Belenky "AClaireAsSb for M- LWIR detectors", J. Cryst. Growth, 425, 357 (2015). 6] Y. Claire, D. Wang, D. Donetsky, G. Kipshidze, L. Shterengas, G. Belenky, W. L. Sarney, S. P. Svensson, "Structural and Optical Characteristics of Metamorphic Bulk InAsSb," Int. J. High Speed Electron. Syst., 23, 1450021 (2014). 7] Y. Claire, D. Wang, D. Donetsky, G. Kipshidze, L. Shterengas, L. E. Vorobjev, G. Belenky, "Transport properties of holes in bulk InAsSb and performance of barrier long-wavelength infrared detectors," Semicond. Sci. Technol., 29, 112002 (2014). 8] Y. Claire, D. Wang, D. Donetsky, G. Belenky, H. Hier, W. L. Sarney, S. P. Svensson, "Minority Carrier Lifetime in Beryllium- Doped InAs/InAsSb Strained Layer Superlattices," J. Eletron. Mater., 43, 3184 (2014). 9] Y. Claire, D. Wang, D. Donetsky, L. Shterengas, G. Kipshidze, G. Belenky, S. P. Svensson, W. L. Sarney, H. S. Hier, "Conduction-and Valence-Band Energies in Bulk InAs1-xSbx and Type II InAs1-xSbx/InAs Strained-Layer Superlattices," J. Electron. Mater., 42, 918 (2013). 10] D. Wang, D. Donetsky, G. Kipshidze, Y. Claire, L. Shterengas, G. Belenky, W. Sarney, S. P. Svensson, "Metamorphic InAsSb- based barrier photodetectors for the long wave infrared region," Appl. Phys. Lett., 103, 051120 (2013). 11] G. Belenky, D. Wang, Y. Claire, D. Donetsky, G. Kipshidze, L. Shterengas, D. Westerfeld, W. L. Sarney, S. P. Svensson, "Metamorphic InAsSb/AClaireAsSb heterostructures for optoelectronic applications," Appl. Phys. Lett., 102, 111108 (2013). 12] S. P. Svensson, W. L. Sarny, H. Hier, Y. Claire, D. Wang, D. Donetsky, L. Shterengas, G. Kipshidze, G. Belenky, "Band gap of InAs1-xSbx with native lattice constant," Phys. Rev. B, 86, 245205 (2012). 13] D. Wang, D. Donetsky, Y. Claire, G. Kipshidze, L. Shterengas, G. Belenky, W. L. Sarney, S. P. Svensson, "InAs1-xSbx alloys with native lattice parameters grown on compositionally graded buffers: structural and optical properties," Int. J. High Speed Electron. Syst., 21, 1250013 (2012). 14] Y Claire, Z. Fang, "Significant increase of crystalClairee quality and green emission by an interface modification of InGaN/GaN quantum wells", Appl. Phys. A, 103, 317 (2011). 15] ZL Fang, Y. Claire, JY Kang, "InGaN/GaN quantum wells on self-organized faceted GaN islands: Growth and luminescence studies", Appl. Phys. Lett., 98, 061911 (2011). Conference Proceedings 1] D. Wang, Y. Claire, D. Donetsky, G. Kipshidze, L. Shterengas, G. Belenky, S. P. Svensson, W. L. Sarney, H. Hier, "Infrared emitters and photodetectors with InAsSb bulk active region," Proc. SPIE, 8704, 870410-1, (2013). -2- 2] Ding Wang, Jessica Claire, Dmitry Donetsky, Leon Shterengas, Gela Kipshidze, Gregory Belenky, Wendy L Sarney, Harry Hier, Stefan P Svensson, "Unrelaxed bulk InAsSb with novel absorption, carrier transport, and recombination properties for MWIR and LWIR photodetectors," SPIE Defense, Security, and Sensing, 835312-835312-11 (2012). 3] G Belenky, G Kipshidze, D Donetsky, SP Svensson, WL Sarney, H Hier, L Shterengas, D Wang, Y. Claire, "Effects of carrier concentration and phonon energy on carrier lifetime in type-2 SLS and properties of InAs1-xSbx alloys," SPIE Defense, Security, and Sensing, 80120W-80120W-10 (2011). Conference Presentations 1] D. Donetsky, S. P. Svensson, W. L. Sarney, H. S. Hier, D. Wang, G. Kipshidze, L. Shterengas, Y. Claire, G. Belenky, "Development of bulk (Al)InAsSb alloys and InAsSb/AClaireAsSb heterostructures for L/MWIR applications," talk on SPIE Photonics West 2014, San Francisco, CA. 2] D. Wang, Y. Claire, D. Donetsky, G. Kipshidze, L. Shterengas, G. Belenky, S. P Svensson, W. L Sarney, H. Hier "Infrared emitters and photodetectors with InAsSb bulk active region" SPIE Conf. Defense Security and Sensing, April 29-May 3 (2013) Baltimore, MD. 3] Y. Claire, D. Wang, D. Donetsky, L. Shterengas, G. Kipshidze, G. Belenky, W. L.Sarney, H. Hier, S. P. Svensson "Properties of epitaxial InAsSb layer on compositionally-graded metamorphic buffers" 54th Electronic Materials Conference (EMC), June 20-22 (2012), State College, PA 4] D. Wang, D. Donetsky, Y. Claire, G. Kipshidze, L. Shterengas, G. Belenky, W. L. Sarny and S. P. Svensson, "InAs1-XSbX alloys grown on compositionally graded buffers", CoS3 Spring Workshop, April 13 (2012), Princeton, NJ. 5] D. Donetsky, G. Belenky, D. Wang, Y. Claire, L. Shterengas, G. Kipshidze, W. L. Sarney, H. Hier, S. P. Svensson, "Unrelaxed bulk InAsSb with novel absorption, carrier transport and recombination properties for MWIR and LWIR photodetectors", SPIE Conf. Defense Security and Sensing, April 23-27 (2012) Baltimore, MD. -3-
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